EPC
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaNĀ®) FETs as power MOSFET replacements in applications such as
| Image | Part Number | Manufacturers | Description | Unit Price($) | Stock | |
|---|---|---|---|---|---|---|
|
EPC2101 | EPC | GAN TRANS ASYMMETRICAL HALF BRID | 0 | 9956 | Inquiry |
|
EPC2100 | EPC | GAN TRANS ASYMMETRICAL HALF BRID | 0 | 7387 | Inquiry |
|
EPC2101ENGRT | EPC | GAN TRANS ASYMMETRICAL HALF BRID | 0 | 4000 | Inquiry |
|
EPC2102ENGRT | EPC | GANFET 2 N-CHANNEL 60V 23A DIE | 0 | 6336 | Inquiry |
|
EPC2100ENGRT | EPC | GANFET 2 N-CH 30V 9.5A/38A DIE | 0 | 3546 | Inquiry |
|
EPC2110ENGRT | EPC | GAN TRANS 2N-CH 120V BUMPED DIE | 0 | 11681 | Inquiry |
|
EPC2106ENGRT | EPC | GAN TRANS 2N-CH 100V BUMPED DIE | 0 | 9587 | Inquiry |
|
EPC2103ENGRT | EPC | GANFET TRANS SYM HALF BRDG 80V | 0 | 5256 | Inquiry |
|
EPC2103 | EPC | GAN TRANS SYMMETRICAL HALF BRIDG | 0 | 8504 | Inquiry |
|
EPC2102 | EPC | GAN TRANS SYMMETRICAL HALF BRIDG | 0 | 9226 | Inquiry |
EPC2101
GAN TRANS ASYMMETRICAL HALF BRID
EPC2100
GAN TRANS ASYMMETRICAL HALF BRID
EPC2101ENGRT
GAN TRANS ASYMMETRICAL HALF BRID
EPC2102ENGRT
GANFET 2 N-CHANNEL 60V 23A DIE
EPC2100ENGRT
GANFET 2 N-CH 30V 9.5A/38A DIE
EPC2110ENGRT
GAN TRANS 2N-CH 120V BUMPED DIE
EPC2106ENGRT
GAN TRANS 2N-CH 100V BUMPED DIE
EPC2103ENGRT
GANFET TRANS SYM HALF BRDG 80V
EPC2103
GAN TRANS SYMMETRICAL HALF BRIDG
EPC2102
GAN TRANS SYMMETRICAL HALF BRIDG
Lanka Micro