EPC2101

Product Parameter

Series

eGaN®

FET Type

2 N-Channel (Half Bridge)

Packaging

Digi-Reel®

FET Feature

GaNFET (Gallium Nitride)

Part Status

Active

Power - Max

-

Mounting Type

Surface Mount

Package / Case

Die

Vgs(th) (Max) @ Id

2.5V @ 3mA, 2.5V @ 12mA

Operating Temperature

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V

Supplier Device Package

Die

Gate Charge (Qg) (Max) @ Vgs

2.7nC @ 5V, 12nC @ 5V

Drain to Source Voltage (Vdss)

60V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 30V, 1200pF @ 30V

Current - Continuous Drain (Id) @ 25°C

9.5A, 38A