EPC2100

Product Parameter

Series

eGaN®

FET Type

2 N-Channel (Half Bridge)

Packaging

Digi-Reel®

FET Feature

GaNFET (Gallium Nitride)

Part Status

Active

Power - Max

-

Mounting Type

Surface Mount

Package / Case

Die

Vgs(th) (Max) @ Id

2.5V @ 4mA, 2.5V @ 16mA

Operating Temperature

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V

Supplier Device Package

Die

Gate Charge (Qg) (Max) @ Vgs

4.9nC @ 15V, 19nC @ 15V

Drain to Source Voltage (Vdss)

30V

Input Capacitance (Ciss) (Max) @ Vds

475pF @ 15V, 1960pF @ 15V

Current - Continuous Drain (Id) @ 25°C

10A (Ta), 40A (Ta)