Menu Navigation

EPC2110ENGRT
Images are for reference only. See Product Specifications for product details
thumb-0

EPC2110ENGRT

Manufacturer: EPC In Stock 11681 pcs

Datasheet: EPC2110ENGRT
Product Category: Transistors - FETs, MOSFETs - Arrays Reference Price (In US Dollars) 1pcs
Description: GAN TRANS 2N-CH 120V BUMPED DIE Inquiry
Fill out the below form and we will contact you as soon as possible.

Product Parameter

Series
eGaN®
FET Type
2 N-Channel (Dual) Common Source
Packaging
Digi-Reel®
FET Feature
GaNFET (Gallium Nitride)
Part Status
Active
Power - Max
-
Mounting Type
Surface Mount
Package / Case
Die
Vgs(th) (Max) @ Id
2.5V @ 700µA
Operating Temperature
-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
60mOhm @ 4A, 5V
Supplier Device Package
Die
Gate Charge (Qg) (Max) @ Vgs
0.8nC @ 5V
Drain to Source Voltage (Vdss)
120V
Input Capacitance (Ciss) (Max) @ Vds
80pF @ 60V
Current - Continuous Drain (Id) @ 25°C
3.4A