Lanka Micro
EPC2106ENGRT
| Manufacturer: | EPC |
In Stock 9587 pcs
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|---|---|---|---|
| Datasheet: | EPC2106ENGRT | ||
| Product Category: | Transistors - FETs, MOSFETs - Arrays | Reference Price (In US Dollars) | 1pcs |
| Description: | GAN TRANS 2N-CH 100V BUMPED DIE | Inquiry | |
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Product Parameter
- Series
- eGaN®
- FET Type
- 2 N-Channel (Half Bridge)
- Packaging
- Digi-Reel®
- FET Feature
- GaNFET (Gallium Nitride)
- Part Status
- Active
- Power - Max
- -
- Mounting Type
- Surface Mount
- Package / Case
- Die
- Vgs(th) (Max) @ Id
- 2.5V @ 600µA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 70mOhm @ 2A, 5V
- Supplier Device Package
- Die
- Gate Charge (Qg) (Max) @ Vgs
- 0.73nC @ 5V
- Drain to Source Voltage (Vdss)
- 100V
- Input Capacitance (Ciss) (Max) @ Vds
- 75pF @ 50V
- Current - Continuous Drain (Id) @ 25°C
- 1.7A