Lanka Micro
EPC
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as
| Image | Part Number | Manufacturers | Description | Unit Price($) | Stock | |
|---|---|---|---|---|---|---|
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EPC2104ENG | EPC | GAN TRANS 2N-CH 100V BUMPED DIE | 0 | 0 | Inquiry |
|
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EPC2103ENG | EPC | GAN TRANS 2N-CH 80V BUMPED DIE | 0 | 0 | Inquiry |
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EPC2102ENG | EPC | GAN TRANS 2N-CH 60V BUMPED DIE | 0 | 0 | Inquiry |
|
EPC2101ENG | EPC | GAN TRANS 2N-CH 60V BUMPED DIE | 0 | 0 | Inquiry |
|
|
EPC2100ENG | EPC | GAN TRANS 2N-CH 30V BUMPED DIE | 0 | 0 | Inquiry |
|
EPC2111ENGRT | EPC | GAN TRANS ASYMMETRICAL HALF BRID | 0 | 0 | Inquiry |
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EPC2105ENGRT | EPC | GANFET 2NCH 80V 9.5A DIE | 0 | 242 | Inquiry |
|
EPC2110 | EPC | GANFET 2NCH 120V 3.4A DIE | 0 | 3998 | Inquiry |
|
EPC2108 | EPC | GANFET 3 N-CH 60V/100V 9BGA | 0 | 0 | Inquiry |
|
|
EPC2105 | EPC | GAN TRANS ASYMMETRICAL HALF BRID | 0 | 9969 | Inquiry |
EPC2104ENG
GAN TRANS 2N-CH 100V BUMPED DIE
EPC2103ENG
GAN TRANS 2N-CH 80V BUMPED DIE
EPC2102ENG
GAN TRANS 2N-CH 60V BUMPED DIE
EPC2101ENG
GAN TRANS 2N-CH 60V BUMPED DIE
EPC2100ENG
GAN TRANS 2N-CH 30V BUMPED DIE
EPC2111ENGRT
GAN TRANS ASYMMETRICAL HALF BRID
EPC2105ENGRT
GANFET 2NCH 80V 9.5A DIE
EPC2110
GANFET 2NCH 120V 3.4A DIE
EPC2108
GANFET 3 N-CH 60V/100V 9BGA
EPC2105
GAN TRANS ASYMMETRICAL HALF BRID