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EPC2100ENG
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EPC2100ENG

Manufacturer: EPC In Stock 0 pcs

Datasheet: EPC2100ENG
Product Category: Transistors - FETs, MOSFETs - Arrays Reference Price (In US Dollars) 1pcs
Description: GAN TRANS 2N-CH 30V BUMPED DIE Inquiry
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Product Parameter

Series
eGaN®
FET Type
2 N-Channel (Half Bridge)
Packaging
Tray
FET Feature
GaNFET (Gallium Nitride)
Part Status
Discontinued at Digi-Key
Power - Max
-
Mounting Type
Surface Mount
Package / Case
Die
Vgs(th) (Max) @ Id
2.5V @ 4mA, 2.5V @ 16mA
Operating Temperature
-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Supplier Device Package
Die
Gate Charge (Qg) (Max) @ Vgs
4.9nC @ 15V, 19nC @ 15V
Drain to Source Voltage (Vdss)
30V
Input Capacitance (Ciss) (Max) @ Vds
475pF @ 15V, 1960pF @ 15V
Current - Continuous Drain (Id) @ 25°C
10A (Ta), 40A (Ta)