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SIZ200DT-T1-GE3
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SIZ200DT-T1-GE3

Manufacturer: Vishay / Siliconix In Stock 0 pcs

Datasheet: SIZ200DT-T1-GE3
Product Category: Transistors - FETs, MOSFETs - Arrays Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH DUAL 30V Inquiry
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Product Parameter

Series
TrenchFET® Gen IV
FET Type
2 N-Channel (Dual)
Packaging
Digi-Reel®
FET Feature
Standard
Part Status
Active
Power - Max
4.3W (Ta), 33W (Tc)
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Vgs(th) (Max) @ Id
2.4V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
Supplier Device Package
8-PowerPair® (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs
28nC @ 10V, 30nC @ 10V
Drain to Source Voltage (Vdss)
30V
Input Capacitance (Ciss) (Max) @ Vds
1510pF @ 15V, 1600pF @ 15V
Current - Continuous Drain (Id) @ 25°C
22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)