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SISS23DN-T1-GE3
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SISS23DN-T1-GE3

Manufacturer: Vishay / Siliconix In Stock 0 pcs

Datasheet: SISS23DN-T1-GE3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET P-CH 20V 50A PPAK 1212-8S Inquiry
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Product Parameter

Series
TrenchFET®
FET Type
P-Channel
Packaging
Digi-Reel®
Vgs (Max)
±8V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8S
Vgs(th) (Max) @ Id
900mV @ 250µA
Operating Temperature
-50°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
4.5mOhm @ 20A, 4.5V
Power Dissipation (Max)
4.8W (Ta), 57W (Tc)
Supplier Device Package
PowerPAK® 1212-8S (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs
300nC @ 10V
Drain to Source Voltage (Vdss)
20V
Input Capacitance (Ciss) (Max) @ Vds
8840pF @ 15V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V