Lanka Micro
SISS06DN-T1-GE3
| Manufacturer: | Vishay / Siliconix |
In Stock 50 pcs
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|---|---|---|---|
| Datasheet: | SISS06DN-T1-GE3 | ||
| Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
| Description: | MOSFET N-CHAN 30 V POWERPAK 1212 | $1.12 | |
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Product Parameter
- Series
- TrenchFET® Gen IV
- FET Type
- N-Channel
- Packaging
- Cut Tape (CT)
- Vgs (Max)
- +20V, -16V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® 1212-8S
- Vgs(th) (Max) @ Id
- 2.2V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.38mOhm @ 15A, 10V
- Power Dissipation (Max)
- 5W (Ta), 65.7W (Tc)
- Supplier Device Package
- PowerPAK® 1212-8S (3.3x3.3)
- Gate Charge (Qg) (Max) @ Vgs
- 77nC @ 10V
- Drain to Source Voltage (Vdss)
- 30V
- Input Capacitance (Ciss) (Max) @ Vds
- 3660pF @ 15V
- Current - Continuous Drain (Id) @ 25°C
- 47.6A (Ta), 172.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V