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SISS22DN-T1-GE3
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SISS22DN-T1-GE3

Manufacturer: Vishay / Siliconix In Stock 0 pcs

Datasheet: SISS22DN-T1-GE3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 60V PPAK 1212-8S Inquiry
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Product Parameter

Series
TrenchFET® Gen IV
FET Type
N-Channel
Packaging
Digi-Reel®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8S
Vgs(th) (Max) @ Id
3.6V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
4mOhm @ 15A, 10V
Power Dissipation (Max)
5W (Ta), 65.7W (Tc)
Supplier Device Package
PowerPAK® 1212-8S (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs
44nC @ 10V
Drain to Source Voltage (Vdss)
60V
Input Capacitance (Ciss) (Max) @ Vds
1870pF @ 30V
Current - Continuous Drain (Id) @ 25°C
25A (Ta), 90.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V