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SISA10DN-T1-GE3
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SISA10DN-T1-GE3

Manufacturer: Vishay / Siliconix In Stock 3130 pcs

Datasheet: SISA10DN-T1-GE3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 30V 30A 1212-8 Inquiry
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Product Parameter

Series
TrenchFET®
FET Type
N-Channel
Packaging
Digi-Reel®
Vgs (Max)
+20V, -16V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Vgs(th) (Max) @ Id
2.2V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
3.7mOhm @ 10A, 10V
Power Dissipation (Max)
3.6W (Ta), 39W (Tc)
Supplier Device Package
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs
51nC @ 10V
Drain to Source Voltage (Vdss)
30V
Input Capacitance (Ciss) (Max) @ Vds
2425pF @ 15V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V