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SISA04DN-T1-GE3
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SISA04DN-T1-GE3

Manufacturer: Vishay / Siliconix In Stock 0 pcs

Datasheet: SISA04DN-T1-GE3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 30V 40A 1212-8 $0.5
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Product Parameter

Series
TrenchFET®
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
+20V, -16V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Vgs(th) (Max) @ Id
2.2V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
2.15mOhm @ 15A, 10V
Power Dissipation (Max)
3.7W (Ta), 52W (Tc)
Supplier Device Package
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs
77nC @ 10V
Drain to Source Voltage (Vdss)
30V
Input Capacitance (Ciss) (Max) @ Vds
3595pF @ 15V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V