Menu Navigation

no images
Images are for reference only. See Product Specifications for product details
no images

SIHG018N60E-GE3

Manufacturer: Vishay / Siliconix In Stock 0 pcs

Datasheet: SIHG018N60E-GE3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CHAN 650V TO247AC $16.39
Fill out the below form and we will contact you as soon as possible.

Product Parameter

Series
E
FET Type
N-Channel
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
23mOhm @ 25A, 10V
Power Dissipation (Max)
524W (Tc)
Supplier Device Package
TO-247AC
Gate Charge (Qg) (Max) @ Vgs
228nC @ 10V
Drain to Source Voltage (Vdss)
600V
Input Capacitance (Ciss) (Max) @ Vds
7612pF @ 100V
Current - Continuous Drain (Id) @ 25°C
99A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V