Menu Navigation

SIHD1K4N60E-GE3
Images are for reference only. See Product Specifications for product details
thumb-0

SIHD1K4N60E-GE3

Manufacturer: Vishay / Siliconix In Stock 3015 pcs

Datasheet: SIHD1K4N60E-GE3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH DPAK TO-252 $1.11
Fill out the below form and we will contact you as soon as possible.

Product Parameter

Series
E
FET Type
N-Channel
Packaging
Bulk
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
1.45Ohm @ 500mA, 10V
Power Dissipation (Max)
63W (Tc)
Supplier Device Package
TO-252AA
Gate Charge (Qg) (Max) @ Vgs
7.5nC @ 10V
Drain to Source Voltage (Vdss)
600V
Input Capacitance (Ciss) (Max) @ Vds
172pF @ 100V
Current - Continuous Drain (Id) @ 25°C
4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V