SI7703EDN-T1-GE3
Manufacturer: | Vishay / Siliconix |
In Stock 0 pcs
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Datasheet: | SI7703EDN-T1-GE3 | ||
Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
Description: | MOSFET P-CH 20V 4.3A 1212-8 PPAK | Inquiry |
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Product Parameter
- Series
- TrenchFET®
- FET Type
- P-Channel
- Packaging
- Digi-Reel®
- Vgs (Max)
- ±12V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- Schottky Diode (Isolated)
- Part Status
- Obsolete
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® 1212-8
- Vgs(th) (Max) @ Id
- 1V @ 800µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 48mOhm @ 6.3A, 4.5V
- Power Dissipation (Max)
- 1.3W (Ta)
- Supplier Device Package
- PowerPAK® 1212-8
- Gate Charge (Qg) (Max) @ Vgs
- 18nC @ 4.5V
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V