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SI7703EDN-T1-GE3
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SI7703EDN-T1-GE3

Manufacturer: Vishay / Siliconix In Stock 0 pcs

Datasheet: SI7703EDN-T1-GE3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET P-CH 20V 4.3A 1212-8 PPAK Inquiry
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Product Parameter

Series
TrenchFET®
FET Type
P-Channel
Packaging
Digi-Reel®
Vgs (Max)
±12V
Technology
MOSFET (Metal Oxide)
FET Feature
Schottky Diode (Isolated)
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Vgs(th) (Max) @ Id
1V @ 800µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
48mOhm @ 6.3A, 4.5V
Power Dissipation (Max)
1.3W (Ta)
Supplier Device Package
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs
18nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V