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SI7117DN-T1-GE3
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SI7117DN-T1-GE3

Manufacturer: Vishay / Siliconix In Stock 3000 pcs

Datasheet: SI7117DN-T1-GE3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET P-CH 150V 2.17A 1212-8 Inquiry
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Product Parameter

Series
TrenchFET®
FET Type
P-Channel
Packaging
Digi-Reel®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Vgs(th) (Max) @ Id
4.5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
1.2Ohm @ 500mA, 10V
Power Dissipation (Max)
3.2W (Ta), 12.5W (Tc)
Supplier Device Package
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs
12nC @ 10V
Drain to Source Voltage (Vdss)
150V
Input Capacitance (Ciss) (Max) @ Vds
510pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2.17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V