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SI7100DN-T1-GE3
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SI7100DN-T1-GE3

Manufacturer: Vishay / Siliconix In Stock 0 pcs

Datasheet: SI7100DN-T1-GE3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 8V 35A PPAK 1212-8 Inquiry
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Product Parameter

Series
TrenchFET®
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±8V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Vgs(th) (Max) @ Id
1V @ 250µA
Operating Temperature
-50°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
3.5mOhm @ 15A, 4.5V
Power Dissipation (Max)
3.8W (Ta), 52W (Tc)
Supplier Device Package
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs
105nC @ 8V
Drain to Source Voltage (Vdss)
8V
Input Capacitance (Ciss) (Max) @ Vds
3810pF @ 4V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V