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SI3900DV-T1-GE3
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SI3900DV-T1-GE3

Manufacturer: Vishay / Siliconix In Stock 5957 pcs

Datasheet: SI3900DV-T1-GE3
Product Category: Transistors - FETs, MOSFETs - Arrays Reference Price (In US Dollars) 1pcs
Description: MOSFET 2N-CH 20V 2A 6-TSOP Inquiry
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Product Parameter

Series
TrenchFET®
FET Type
2 N-Channel (Dual)
Packaging
Digi-Reel®
FET Feature
Logic Level Gate
Part Status
Active
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Base Part Number
SI3900
Vgs(th) (Max) @ Id
1.5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
125mOhm @ 2.4A, 4.5V
Supplier Device Package
6-TSOP
Gate Charge (Qg) (Max) @ Vgs
4nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Input Capacitance (Ciss) (Max) @ Vds
-
Current - Continuous Drain (Id) @ 25°C
2A