IRFD113PBF
Manufacturer: | Vishay / Siliconix |
In Stock 2334 pcs
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Datasheet: | IRFD113PBF | ||
Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
Description: | MOSFET N-CH 60V 800MA 4-DIP | $2.07 |
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Product Parameter
- Series
- -
- FET Type
- N-Channel
- Packaging
- Tube
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- 4-DIP (0.300", 7.62mm)
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 800mOhm @ 800mA, 10V
- Power Dissipation (Max)
- 1W (Tc)
- Supplier Device Package
- 4-DIP, Hexdip, HVMDIP
- Gate Charge (Qg) (Max) @ Vgs
- 7nC @ 10V
- Drain to Source Voltage (Vdss)
- 60V
- Input Capacitance (Ciss) (Max) @ Vds
- 200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 800mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V