Product Parameter
- Series
- -
- FET Type
- N-Channel
- Packaging
- Tube
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Package / Case
- 4-DIP (0.300", 7.62mm)
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 200mOhm @ 860mA, 10V
- Power Dissipation (Max)
- 1W (Tc)
- Supplier Device Package
- 4-DIP, Hexdip, HVMDIP
- Gate Charge (Qg) (Max) @ Vgs
- 13nC @ 10V
- Drain to Source Voltage (Vdss)
- 50V
- Input Capacitance (Ciss) (Max) @ Vds
- 250pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V