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TPN22006NH,LQ
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TPN22006NH,LQ

Manufacturer: Toshiba Semiconductor and Storage In Stock 1618 pcs

Datasheet: TPN22006NH,LQ
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N CH 60V 9A 8-TSON Inquiry
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Product Parameter

Series
U-MOSVIII-H
FET Type
N-Channel
Packaging
Digi-Reel®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Vgs(th) (Max) @ Id
4V @ 100µA
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
22mOhm @ 4.5A, 10V
Power Dissipation (Max)
700mW (Ta), 18W (Tc)
Supplier Device Package
8-TSON Advance (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs
12nC @ 10V
Drain to Source Voltage (Vdss)
60V
Input Capacitance (Ciss) (Max) @ Vds
710pF @ 30V
Current - Continuous Drain (Id) @ 25°C
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6.5V, 10V