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TK4R3E06PL,S1X
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TK4R3E06PL,S1X

Manufacturer: Toshiba Semiconductor and Storage In Stock 1558 pcs

Datasheet: TK4R3E06PL,S1X
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: X35 PB-F POWER MOSFET TRANSISTOR $1.89
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Product Parameter

Series
U-MOSIX-H
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
2.5V @ 500µA
Operating Temperature
175°C (TJ)
Rds On (Max) @ Id, Vgs
7.2mOhm @ 15A, 4.5V
Power Dissipation (Max)
87W (Tc)
Supplier Device Package
TO-220
Gate Charge (Qg) (Max) @ Vgs
48.2nC @ 10V
Drain to Source Voltage (Vdss)
60V
Input Capacitance (Ciss) (Max) @ Vds
3280pF @ 30V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V