Menu Navigation

HN4B01JE(TE85L,F)
Images are for reference only. See Product Specifications for product details
thumb-0

HN4B01JE(TE85L,F)

Manufacturer: Toshiba Semiconductor and Storage In Stock 435 pcs

Datasheet: HN4B01JE(TE85L,F)
Product Category: Transistors - Bipolar (BJT) - Arrays Reference Price (In US Dollars) 1pcs
Description: TRANS NPN/PNP 50V 0.15A ESV PLN Inquiry
Fill out the below form and we will contact you as soon as possible.

Product Parameter

Series
-
Packaging
Digi-Reel®
Part Status
Active
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SOT-553
Transistor Type
NPN, PNP (Emitter Coupled)
Operating Temperature
150°C (TJ)
Frequency - Transition
80MHz
Supplier Device Package
ESV
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Current - Collector (Ic) (Max)
150mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 10MA, 100MA
Voltage - Collector Emitter Breakdown (Max)
50V