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SCT10N120
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SCT10N120

Manufacturer: STMicroelectronics In Stock 2144 pcs

Datasheet: SCT10N120
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 1.2KV TO247-3 $11.33
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Product Parameter

Series
-
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
+25V, -10V
Technology
SiCFET (Silicon Carbide)
FET Feature
-
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-247-3
Base Part Number
SCT10
Vgs(th) (Max) @ Id
3.5V @ 250µA
Operating Temperature
-55°C ~ 200°C (TJ)
Rds On (Max) @ Id, Vgs
690mOhm @ 6A, 20V
Power Dissipation (Max)
150W (Tc)
Supplier Device Package
HiP247™
Gate Charge (Qg) (Max) @ Vgs
22nC @ 20V
Drain to Source Voltage (Vdss)
1200V
Input Capacitance (Ciss) (Max) @ Vds
290pF @ 400V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V