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RGT8NS65DGC9
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RGT8NS65DGC9

Manufacturer: ROHM Semiconductor In Stock 1000 pcs

Datasheet: RGT8NS65DGC9
Product Category: Transistors - IGBTs - Single Reference Price (In US Dollars) 1pcs
Description: IGBT $1.73
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Product Parameter

Series
-
IGBT Type
Trench Field Stop
Packaging
Tube
Input Type
Standard
Gate Charge
13.5nC
Part Status
Active
Power - Max
65W
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Test Condition
400V, 4A, 50Ohm, 15V
Switching Energy
-
Td (on/off) @ 25°C
17ns/69ns
Operating Temperature
-40°C ~ 175°C (TJ)
Supplier Device Package
TO-262
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 4A
Reverse Recovery Time (trr)
40ns
Current - Collector (Ic) (Max)
8A
Current - Collector Pulsed (Icm)
12A
Voltage - Collector Emitter Breakdown (Max)
650V