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BSM300D12P2E001
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BSM300D12P2E001

Manufacturer: ROHM Semiconductor In Stock 22 pcs

Datasheet: BSM300D12P2E001
Product Category: Transistors - FETs, MOSFETs - Arrays Reference Price (In US Dollars) 1pcs
Description: MOSFET 2N-CH 1200V 300A $663.08
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Product Parameter

Series
-
FET Type
2 N-Channel (Half Bridge)
Packaging
Tray
FET Feature
Silicon Carbide (SiC)
Part Status
Active
Power - Max
1875W
Mounting Type
Chassis Mount
Package / Case
Module
Vgs(th) (Max) @ Id
4V @ 68mA
Operating Temperature
-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
-
Supplier Device Package
Module
Gate Charge (Qg) (Max) @ Vgs
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds
35000pF @ 10V
Current - Continuous Drain (Id) @ 25°C
300A (Tc)