BSM300D12P2E001
| Manufacturer: | ROHM Semiconductor |
In Stock 22 pcs
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| Datasheet: | BSM300D12P2E001 | ||
| Product Category: | Transistors - FETs, MOSFETs - Arrays | Reference Price (In US Dollars) | 1pcs |
| Description: | MOSFET 2N-CH 1200V 300A | $663.08 | |
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Product Parameter
- Series
- -
- FET Type
- 2 N-Channel (Half Bridge)
- Packaging
- Tray
- FET Feature
- Silicon Carbide (SiC)
- Part Status
- Active
- Power - Max
- 1875W
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Vgs(th) (Max) @ Id
- 4V @ 68mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- -
- Supplier Device Package
- Module
- Gate Charge (Qg) (Max) @ Vgs
- -
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Input Capacitance (Ciss) (Max) @ Vds
- 35000pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 300A (Tc)
Lanka Micro