Product Parameter
- Series
- -
- FET Type
- N-Channel
- Packaging
- Tape & Box (TB)
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Operating Temperature
- -
- Rds On (Max) @ Id, Vgs
- 1.2Ohm @ 1A, 10V
- Power Dissipation (Max)
- 350mW (Tc)
- Supplier Device Package
- TO-92-3
- Drain to Source Voltage (Vdss)
- 60V
- Input Capacitance (Ciss) (Max) @ Vds
- 100pF @ 15V
- Current - Continuous Drain (Id) @ 25°C
- 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)
- 5V, 10V