RFP50N05L

Product Parameter

Series

-

FET Type

N-Channel

Packaging

Tube

Vgs (Max)

±10V

Technology

MOSFET (Metal Oxide)

FET Feature

-

Part Status

Obsolete

Mounting Type

Through Hole

Package / Case

TO-220-3

Vgs(th) (Max) @ Id

2V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

22mOhm @ 50A, 5V

Power Dissipation (Max)

110W (Tc)

Supplier Device Package

TO-220-3

Gate Charge (Qg) (Max) @ Vgs

140nC @ 10V

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V