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NJVMJD112T4G
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NJVMJD112T4G

Manufacturer: ON Semiconductor In Stock 0 pcs

Datasheet: NJVMJD112T4G
Product Category: Transistors - Bipolar (BJT) - Single Reference Price (In US Dollars) 1pcs
Description: TRANS NPN DARL 100V 2A DPAK $0.32
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Product Parameter

Series
-
Packaging
Tape & Reel (TR)
Part Status
Active
Power - Max
20W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Type
NPN - Darlington
Base Part Number
MJD112
Operating Temperature
-65°C ~ 150°C (TJ)
Frequency - Transition
25MHz
Supplier Device Package
DPAK
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Current - Collector (Ic) (Max)
2A
Current - Collector Cutoff (Max)
20µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 2A, 3V
Voltage - Collector Emitter Breakdown (Max)
100V