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MUN5112DW1T1G
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MUN5112DW1T1G

Manufacturer: ON Semiconductor In Stock 0 pcs

Datasheet: MUN5112DW1T1G
Product Category: Transistors - Bipolar (BJT) - Arrays, Pre-Biased Reference Price (In US Dollars) 1pcs
Description: TRANS 2PNP PREBIAS 0.25W SOT363 Inquiry
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Product Parameter

Series
-
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Transistor Type
2 PNP - Pre-Biased (Dual)
Base Part Number
MUN51**DW1T
Resistor - Base (R1)
22kOhms
Frequency - Transition
-
Supplier Device Package
SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2)
22kOhms
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector (Ic) (Max)
100mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 5mA, 10V
Voltage - Collector Emitter Breakdown (Max)
50V