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MJ11012G
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MJ11012G

Manufacturer: ON Semiconductor In Stock 68 pcs

Datasheet: MJ11012G
Product Category: Transistors - Bipolar (BJT) - Single Reference Price (In US Dollars) 1pcs
Description: TRANS NPN DARL 60V 30A TO-3 $7.28
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Product Parameter

Series
-
Packaging
Tray
Part Status
Active
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Transistor Type
NPN - Darlington
Operating Temperature
-55°C ~ 200°C (TJ)
Frequency - Transition
4MHz
Supplier Device Package
TO-204 (TO-3)
Vce Saturation (Max) @ Ib, Ic
4V @ 300mA, 30A
Current - Collector (Ic) (Max)
30A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 20A, 5V
Voltage - Collector Emitter Breakdown (Max)
60V