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HGTP10N120BN
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HGTP10N120BN

Manufacturer: ON Semiconductor In Stock 0 pcs

Datasheet: HGTP10N120BN
Product Category: Transistors - IGBTs - Single Reference Price (In US Dollars) 1pcs
Description: IGBT 1200V 35A 298W TO220AB $1.77
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Product Parameter

Series
-
IGBT Type
NPT
Packaging
Tube
Input Type
Standard
Gate Charge
100nC
Part Status
Not For New Designs
Power - Max
298W
Mounting Type
Through Hole
Package / Case
TO-220-3
Test Condition
960V, 10A, 10Ohm, 15V
Switching Energy
320µJ (on), 800µJ (off)
Td (on/off) @ 25°C
23ns/165ns
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-220-3
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 10A
Current - Collector (Ic) (Max)
35A
Current - Collector Pulsed (Icm)
80A
Voltage - Collector Emitter Breakdown (Max)
1200V