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HGT1S10N120BNS
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HGT1S10N120BNS

Manufacturer: ON Semiconductor In Stock 0 pcs

Datasheet: HGT1S10N120BNS
Product Category: Transistors - IGBTs - Single Reference Price (In US Dollars) 1pcs
Description: IGBT 1200V 35A 298W TO263AB $1.86
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Product Parameter

Series
-
IGBT Type
NPT
Packaging
Tube
Input Type
Standard
Gate Charge
100nC
Part Status
Not For New Designs
Power - Max
298W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Test Condition
960V, 10A, 10Ohm, 15V
Base Part Number
HGT1S10N120
Switching Energy
320µJ (on), 800µJ (off)
Td (on/off) @ 25°C
23ns/165ns
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-263AB
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 10A
Current - Collector (Ic) (Max)
35A
Current - Collector Pulsed (Icm)
80A
Voltage - Collector Emitter Breakdown (Max)
1200V