FQA65N06

Product Parameter

Series

QFET®

FET Type

N-Channel

Packaging

Tube

Vgs (Max)

±25V

Technology

MOSFET (Metal Oxide)

FET Feature

-

Part Status

Obsolete

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

16mOhm @ 36A, 10V

Power Dissipation (Max)

183W (Tc)

Supplier Device Package

TO-3P

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Drain to Source Voltage (Vdss)

60V

Input Capacitance (Ciss) (Max) @ Vds

2410pF @ 25V

Current - Continuous Drain (Id) @ 25°C

72A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V