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PDTD113ES,126

Manufacturer: NXP USA Inc. In Stock 0 pcs

Datasheet: PDTD113ES,126
Product Category: Transistors - Bipolar (BJT) - Single, Pre-Biased Reference Price (In US Dollars) 1pcs
Description: TRANS PREBIAS NPN 500MW TO92-3 Inquiry
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Product Parameter

Series
-
Packaging
Tape & Box (TB)
Part Status
Obsolete
Power - Max
500mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Type
NPN - Pre-Biased
Base Part Number
PDTD113
Resistor - Base (R1)
1 kOhms
Supplier Device Package
TO-92-3
Resistor - Emitter Base (R2)
1 kOhms
Vce Saturation (Max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Current - Collector (Ic) (Max)
500mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
33 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max)
50V