APTM100A13DG
| Manufacturer: | Microsemi Corporation |
In Stock 0 pcs
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| Datasheet: | APTM100A13DG | ||
| Product Category: | Transistors - FETs, MOSFETs - Arrays | Reference Price (In US Dollars) | 1pcs |
| Description: | MOSFET 2N-CH 1000V 65A SP6 | $160.29 | |
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Product Parameter
- Series
- -
- FET Type
- 2 N-Channel (Half Bridge)
- Packaging
- Bulk
- FET Feature
- Standard
- Part Status
- Active
- Power - Max
- 1250W
- Mounting Type
- Chassis Mount
- Package / Case
- SP6
- Vgs(th) (Max) @ Id
- 5V @ 6mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 156mOhm @ 32.5A, 10V
- Supplier Device Package
- SP6
- Gate Charge (Qg) (Max) @ Vgs
- 562nC @ 10V
- Drain to Source Voltage (Vdss)
- 1000V (1kV)
- Input Capacitance (Ciss) (Max) @ Vds
- 15200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 65A
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