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APTM100A13DG

Manufacturer: Microsemi Corporation In Stock 0 pcs

Datasheet: APTM100A13DG
Product Category: Transistors - FETs, MOSFETs - Arrays Reference Price (In US Dollars) 1pcs
Description: MOSFET 2N-CH 1000V 65A SP6 $160.29
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Product Parameter

Series
-
FET Type
2 N-Channel (Half Bridge)
Packaging
Bulk
FET Feature
Standard
Part Status
Active
Power - Max
1250W
Mounting Type
Chassis Mount
Package / Case
SP6
Vgs(th) (Max) @ Id
5V @ 6mA
Operating Temperature
-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
156mOhm @ 32.5A, 10V
Supplier Device Package
SP6
Gate Charge (Qg) (Max) @ Vgs
562nC @ 10V
Drain to Source Voltage (Vdss)
1000V (1kV)
Input Capacitance (Ciss) (Max) @ Vds
15200pF @ 25V
Current - Continuous Drain (Id) @ 25°C
65A