SPU18P06P

Product Parameter

Series

SIPMOS®

FET Type

P-Channel

Packaging

Tube

Vgs (Max)

±20V

Technology

MOSFET (Metal Oxide)

FET Feature

-

Part Status

Obsolete

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id

4V @ 1mA

Operating Temperature

-

Rds On (Max) @ Id, Vgs

130mOhm @ 13.2A, 10V

Power Dissipation (Max)

-

Supplier Device Package

PG-TO251-3

Gate Charge (Qg) (Max) @ Vgs

33nC @ 10V

Drain to Source Voltage (Vdss)

60V

Input Capacitance (Ciss) (Max) @ Vds

860pF @ 25V

Current - Continuous Drain (Id) @ 25°C

18.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V