SPI10N10

Product Parameter

Series

SIPMOS®

FET Type

N-Channel

Packaging

Tube

Vgs (Max)

±20V

Technology

MOSFET (Metal Oxide)

FET Feature

-

Part Status

Discontinued at Digi-Key

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Vgs(th) (Max) @ Id

4V @ 21µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

170mOhm @ 7.8A, 10V

Power Dissipation (Max)

50W (Tc)

Supplier Device Package

PG-TO262-3-1

Gate Charge (Qg) (Max) @ Vgs

19.4nC @ 10V

Drain to Source Voltage (Vdss)

100V

Input Capacitance (Ciss) (Max) @ Vds

426pF @ 25V

Current - Continuous Drain (Id) @ 25°C

10.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V