Product Parameter
- Series
- HEXFET®
- FET Type
- N-Channel
- Packaging
- Tube
- Vgs (Max)
- ±16V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 7mOhm @ 60A, 10V
- Power Dissipation (Max)
- 3.8W (Ta), 180W (Tc)
- Supplier Device Package
- TO-262
- Gate Charge (Qg) (Max) @ Vgs
- 60nC @ 4.5V
- Drain to Source Voltage (Vdss)
- 30V
- Input Capacitance (Ciss) (Max) @ Vds
- 3290pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 116A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V