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IRF640NLPBF
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IRF640NLPBF

Manufacturer: Infineon Technologies In Stock 2809 pcs

Datasheet: IRF640NLPBF
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 200V 18A TO-262 $1.68
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Product Parameter

Series
HEXFET®
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ Id
4V @ 250µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
150mOhm @ 11A, 10V
Power Dissipation (Max)
150W (Tc)
Supplier Device Package
TO-262
Gate Charge (Qg) (Max) @ Vgs
67nC @ 10V
Drain to Source Voltage (Vdss)
200V
Input Capacitance (Ciss) (Max) @ Vds
1160pF @ 25V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V