IRF6100

Product Parameter

Series

HEXFET®

FET Type

P-Channel

Packaging

Cut Tape (CT)

Vgs (Max)

±12V

Technology

MOSFET (Metal Oxide)

FET Feature

-

Part Status

Obsolete

Mounting Type

Surface Mount

Package / Case

4-FlipFet™

Vgs(th) (Max) @ Id

1.2V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

65mOhm @ 5.1A, 4.5V

Power Dissipation (Max)

2.2W (Ta)

Supplier Device Package

4-FlipFet™

Gate Charge (Qg) (Max) @ Vgs

21nC @ 5V

Drain to Source Voltage (Vdss)

20V

Input Capacitance (Ciss) (Max) @ Vds

1230pF @ 15V

Current - Continuous Drain (Id) @ 25°C

5.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V