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IPI023NE7N3 G
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IPI023NE7N3 G

Manufacturer: Infineon Technologies In Stock 0 pcs

Datasheet: IPI023NE7N3 G
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 75V 120A TO262-3 Inquiry
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Product Parameter

Series
OptiMOS™
FET Type
N-Channel
Packaging
Tube
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Obsolete
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ Id
3.8V @ 273µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
2.3mOhm @ 100A, 10V
Power Dissipation (Max)
300W (Tc)
Supplier Device Package
PG-TO262-3
Gate Charge (Qg) (Max) @ Vgs
206nC @ 10V
Drain to Source Voltage (Vdss)
75V
Input Capacitance (Ciss) (Max) @ Vds
14400pF @ 37.5V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)