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IPDD60R190G7XTMA1
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IPDD60R190G7XTMA1

Manufacturer: Infineon Technologies In Stock 484 pcs

Datasheet: IPDD60R190G7XTMA1
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET NCH 650V 36A PG-HDSOP-10 $2.82
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Product Parameter

Series
CoolMOS™ G7
FET Type
N-Channel
Packaging
Cut Tape (CT)
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
10-PowerSOP Module
Vgs(th) (Max) @ Id
4V @ 210µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
190mOhm @ 4.2A, 10V
Power Dissipation (Max)
76W (Tc)
Supplier Device Package
PG-HDSOP-10-1
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Drain to Source Voltage (Vdss)
600V
Input Capacitance (Ciss) (Max) @ Vds
718pF @ 400V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V