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IGT60R190D1SATMA1
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IGT60R190D1SATMA1

Manufacturer: Infineon Technologies In Stock 490 pcs

Datasheet: IGT60R190D1SATMA1
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: IC GAN FET 600V 23A 8HSOF Inquiry
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Product Parameter

Series
CoolGaN™
FET Type
N-Channel
Packaging
Digi-Reel®
Vgs (Max)
-10V
Technology
GaNFET (Gallium Nitride)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
8-PowerSFN
Vgs(th) (Max) @ Id
1.6V @ 960µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
-
Power Dissipation (Max)
55.5W (Tc)
Supplier Device Package
PG-HSOF-8-3
Drain to Source Voltage (Vdss)
600V
Input Capacitance (Ciss) (Max) @ Vds
157pF @ 400V
Current - Continuous Drain (Id) @ 25°C
12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-