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DF200R12W1H3B27BOMA1

Manufacturer: Infineon Technologies In Stock 0 pcs

Datasheet: DF200R12W1H3B27BOMA1
Product Category: Transistors - IGBTs - Modules Reference Price (In US Dollars) 1pcs
Description: IGBT MODULE VCES 1200V 200A $50.67
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Product Parameter

Input
Standard
Series
-
IGBT Type
-
Part Status
Active
Power - Max
375W
Configuration
2 Independent
Mounting Type
Chassis Mount
NTC Thermistor
Yes
Package / Case
Module
Operating Temperature
-40°C ~ 150°C
Supplier Device Package
Module
Vce(on) (Max) @ Vge, Ic
1.3V @ 15V, 30A
Current - Collector (Ic) (Max)
30A
Input Capacitance (Cies) @ Vce
2nF @ 25V
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1200V