BUZ32

Product Parameter

Series

SIPMOS®

FET Type

N-Channel

Packaging

Tube

Vgs (Max)

±20V

Technology

MOSFET (Metal Oxide)

FET Feature

-

Part Status

Obsolete

Mounting Type

Through Hole

Package / Case

TO-220-3

Vgs(th) (Max) @ Id

4V @ 1mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

400mOhm @ 6A, 10V

Power Dissipation (Max)

75W (Tc)

Supplier Device Package

PG-TO220-3

Drain to Source Voltage (Vdss)

200V

Input Capacitance (Ciss) (Max) @ Vds

530pF @ 25V

Current - Continuous Drain (Id) @ 25°C

9.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V