Product Parameter
- Series
- SIPMOS®
- FET Type
- N-Channel
- Packaging
- Tube
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 130mOhm @ 13.5A, 10V
- Power Dissipation (Max)
- 125W (Tc)
- Supplier Device Package
- PG-TO220-3-1
- Drain to Source Voltage (Vdss)
- 200V
- Input Capacitance (Ciss) (Max) @ Vds
- 1900pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V