94-3250

Product Parameter

Series

HEXFET®

FET Type

N-Channel

Packaging

Cut Tape (CT)

Vgs (Max)

±12V

Technology

MOSFET (Metal Oxide)

FET Feature

-

Part Status

Obsolete

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric MQ

Vgs(th) (Max) @ Id

2.1V @ 250µA

Operating Temperature

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

11.5mOhm @ 12A, 7V

Power Dissipation (Max)

2.3W (Ta), 42W (Tc)

Supplier Device Package

DIRECTFET™ MQ

Gate Charge (Qg) (Max) @ Vgs

26nC @ 4.5V

Drain to Source Voltage (Vdss)

30V

Input Capacitance (Ciss) (Max) @ Vds

2270pF @ 15V

Current - Continuous Drain (Id) @ 25°C

12A (Ta), 49A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 7V