64-9144

Product Parameter

Series

HEXFET®

FET Type

N-Channel

Packaging

Cut Tape (CT)

Vgs (Max)

±20V

Technology

MOSFET (Metal Oxide)

FET Feature

-

Part Status

Obsolete

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric ST

Vgs(th) (Max) @ Id

2.35V @ 250µA

Operating Temperature

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

8.1mOhm @ 15A, 10V

Power Dissipation (Max)

2.1W (Ta), 42W (Tc)

Supplier Device Package

DIRECTFET™ ST

Gate Charge (Qg) (Max) @ Vgs

17nC @ 4.5V

Drain to Source Voltage (Vdss)

30V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 15V

Current - Continuous Drain (Id) @ 25°C

14A (Ta), 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V